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A perfect conductor and a superconductor with T_c \sim 10\ \mathrm{K} are subjected to the following conditions:

(i) cooled under applied magnetic field to 4\ \mathrm{K}

(ii) cooled to 4\ \mathrm{K} and then magnetic field is applied with schematic diagrams, explain path of magnetic field lines in all these situations.

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CSE 201315 Marks

Explain the race problem encountered in an RS latch and how it can be avoided. Build a Mod-10 counter using JK flip-flops and explain its working.

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CSE 201230 Marks

Explain the variation of Magnetisation of Type I and Type II superconductors as a function of applied magnetic field.

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CSE 201215 Marks

What are the rules followed in biasing a bipolar junction transistor when it is used as an amplifier? Show how n-p-n and p-n-p transistors to be used as an amplifier are biased and the direction of flow of base, collector and emitter currents.

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CSE 201212 Marks

Construct an operational amplifier based analog computer to solve the differential equation \frac{d^2v}{dt^2}-\frac{dv}{dt}+2v=0.

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CSE 201230 Marks

Metallic iron undergoes a structural phase transition from bcc to fcc at 910^\circ\mathrm{C}. At this temperature, the atomic radii of iron atoms in the bcc and fcc structures are 0.126 \times 10^{-9}\,\mathrm{m} and 0.129 \times 10^{-9}\,\mathrm{m} respectively. Calculate the volume change in percentage during this structural change.

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CSE 201212 Marks

Classify diamagnetic, paramagnetic and ferromagnetic materials in terms of their magnetic susceptibility \psi. Plot and explain the variation of \frac{1}{\psi} with temperature for the three materials.

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CSE 201215 Marks

Starting from an expression for the group velocity, arrive at an expression for the effective mass of an electron in a semiconductor. Explain the significance of sign of the effective mass.

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CSE 201230 Marks

Simplify the logical expression AB + \bar{A}\bar{B} + ABC using a Karnaugh map.

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CSE 201110 Marks

Describe the characteristic properties of a superconductor. Derive London equation for a superconductor and hence explain Meissner effect.

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CSE 201120 Marks

An electron beam of 4 Kev is diffracted through a Bragg angle of 16^\circ for the first maxima. If the energy is increased to 16 keV, find the corresponding Bragg angle for diffraction.

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CSE 201110 Marks

Distinguish between intrinsic and extrinsic semiconductors. Show that in a semiconductor, the product of concentrations of the two types of charge carriers is constant at a given temperature.

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CSE 201130 Marks

Draw the common-base amplifier circuit, using an n-p-n transistor and briefly discuss its working.

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CSE 201115 Marks

Simplify the logical expression \overline{(A+B)}B(A+\bar{C}) and draw the logical circuit to implement it.

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CSE 201115 Marks

Derive Bragg diffraction condition in vectorial form using incident and diffracted wave vectors and reciprocal lattice vector.

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CSE 201110 Marks

Find an expression for lattice specific heat of solids, and its low and high temperature limits. What is Debye temperature?

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CSE 201120 Marks

Explain the origin of energy band formation in solids. Show that in nearly free electron approximation, the energy band gap is 2|V_G|, where V_G is Fourier transform of periodic potential seen by the valence electrons.

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CSE 201120 Marks

What is Josephson tunnelling? Distinguish between a.c. and d.c. Josephson effects.

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CSE 201010 Marks

{q-8-067-fig-1} Identify the above op-amp circuit. Estimate the net output voltage V_0.

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CSE 201010 Marks

Distinguish between classical and quantum theory of paramagnetism. Explain the paramagnetism of free electrons on the basis of F.D. distribution.

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CSE 201020 Marks

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